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MMBT3906T -- PNP Epitaxial Silicon Transistor
February 2008
MMBT3906T
PNP Epitaxial Silicon Transistor Features
* General purpose amplifier transistor. * Ultra-Small Surface Mount Package for all types. * Suitable for general switching & amplification * Well suited for portable application
* As complementary type, NPN MMBT3904T is recommended B
Marking : A06
C
E
SOT-523F
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC TJ TSTG
Ta = 25C unless otherwise noted
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range
Value
-40 -40 -5 200 150 -55 ~ 150
Unit
V V V mA C C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T =25C unless otherwise noted
a
Symbol
PC RJA
* Minimum land pad.
Parameter
Collector Power Dissipation, by RJA Thermal Resistance, Junction to Ambient
Max
250 500
Unit
mW C/W
Electrical Characteristics* Ta=25C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICEX hFE
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain
Test Condition
IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -30V, VEB(OFF) =-0.3V VCE = 1V, IC =- 0.1mA VCE = 1V, IC = -1mA VCE = 1V, IC = -10mA VCE = 1V, IC = -50mA VCE = 1V, IC = -100mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCE = -20V, IC = -10mA, f = 100MHz VCB = -5V, IE = 0, f = 1MHz VEB = -0.5V, IC = 0, f = 1MHz VCC = -3V, IC = -10mA IB1 =- IB2 = -1mA
Min.
-40 40 -5
Max.
Unit
V V V
-50 60 80 100 60 30
nA
300
VCE (sat) VBE (sat) fT Cob Cib td tr ts tf
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time
-0.25 -0.4 -0.65 250 7.0 15 35 35 225 75 -0.85 -0.95
V V V V MHz pF pF ns ns ns ns
* DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2%
(c) 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 1
www.fairchildsemi.com
MMBT3906T -- PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
T J=125 C o T J=75 C
o o
Figure 2. Collector-Emitter Saturation Voltage
1000
Vce=1V
Ic=10*Ib
T J=25 C
Current Gain
100
T J=-25 C
o
Collector-Emitter Voltage,[mV]
T J=125 C T J=75 C
o
o
100
T J=25 C T J=-25 C
o
o
10 1 10 100
10 100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Ic=10*Ib T J=25 C
1000
o
Figure 4. Collector- Base Leakage Current
100
T J=-25 C
o
Base-Collector Leakage Current,[nA]
Base- Emitter Voltage,[mV]
T J=75 C T J=125 C
o
o
T J=125 C
10
o
T J=75 C T J=25 C
1 10 20 30
o
o
T J=-25 C
40
o
100 10
100
Collector Current, [mA]
Base-Collector Revere Voltage, [V]
Figure 5. Collector- Base Capacitance
Base- Collector Juntion Capacitance, Cob[pF]
12
Figure 6. Power Derating
300
f=1mhz
250
Power Dissipation, [mW]
11
200
9
150
8
100
6
50
0
0
5
10
0
25
50
75
100
o
125
150
Base- Collector Reverse Voltage, V cb[V]
Ambient Temperature, T a[ C]
(c) 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 2
www.fairchildsemi.com
MMBT3906T -- PNP Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
* * * * Case : SOT-523F Case Material(Molded Plastic): KTMC1060SC UL Flammability classification rating : "V0" Moisture Sensitivity level per JESD22-A1113B : MSL 1
* Lead terminals solderable per MIL-STD7502026 /JESD22A121 * Lead Free Plating : Pure Tin(Matte)
Dimensions in Millimeters
(c) 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 3 www.fairchildsemi.com
MMBT3906T MMBT3906T PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
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Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 4
www.fairchildsemi.com

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